Cleaning Lab: Chemical Ashing vs Physical Sputtering

A hydrocarbon film sits on your substrate. Pick the plasma chemistry, set the power, and watch how each mechanism takes the contamination apart.

Mechanism
Radicals oxidize C–H film
Removal character
Uniform, layer-by-layer
Residue risk
Volatiles pumped away

Schematic teaching model. The mechanism split is real — O₂ radicals convert organics to volatile CO₂/H₂O (chemical ashing), Ar ions knock material off ballistically (sputtering), and mixtures combine chemistry with ion assist — but removal rates, film thickness, and the cleanliness meter are illustrative, not calibrated; real rates depend on pressure, reactor, bias, and the contaminant itself.