Rapid Thermal Processing (RTP) Furnace ARTP600
Product Detail
ARTP600 is a rapid thermal processing (RTP) furnace designed for semiconductor high-temperature processing. It supports oxidation, diffusion, and rapid annealing processes over a 500–1000 °C window, using a dual-layer array of 21 × 1 kW high-power lamps to reach heating rates of up to 150 °C/s. A water-cooled aluminum housing and quartz inner chamber keep the temperature field uniform, the quartz tray accepts 2–6 inch round substrates, and precision gas control rounds out the platform for vacuum or atmosphere operation.
Key features
- 500–1000 °C process windowSupports oxidation, diffusion, and rapid annealing processes across the 500–1000 °C range, with dual-layer top and bottom heating to a maximum of 1000 °C.
- Up to 150 °C/s rampingA dual-layer array of 21 × 1 kW high-power lamps (21 kW total) delivers a maximum heating rate of 150 °C/s for rapid-thermal-processing recipes.
- Quartz chamber, water-cooled housingThe quartz inner chamber and water-cooled aluminum housing are designed to keep the temperature field uniform across the wafer.
- 2–6 inch wafersA quartz tray with a round substrate seat carries 2–6 inch round substrates in and out on the front drawer.
- Vacuum / atmosphere with gas controlThe chamber is specified for vacuum / atmosphere operation, combined with precision gas control.
Product specifications
| Parameter | ARTP600 |
|---|---|
| Model # | ARTP600 |
| SKU # | EIRTP600 |
| Chamber Body | Quartz |
| Temperature Range | Dual-layer (top & bottom) heating, up to 1000 °C |
| Temperature Control Rate | Max heating rate 150 °C/s |
| Sample Stage | Quartz tray with round substrate seat, 2–6 inch |
| Chamber | Vacuum / atmosphere |
| Power | 21 kW |
| Dimensions | 534 × 608 × 272 mm |
| Net Weight | 42 kg |
FAQ
What processes is it used for?
Beyond rapid thermal annealing (RTA), RTP furnaces of this class are used for rapid thermal oxidation, nitridation, and diffusion, rapid chemical vapor deposition, metal silicide formation, and epitaxy processes — including phosphosilicate glass, integrated-circuit manufacturing, metal alloying, and polysilicon and carbide annealing work.
What wafer sizes fit?
The quartz tray has a round substrate seat for 2–6 inch wafers, loaded on the front drawer. Substrate-specific requirements are confirmed at quotation.
Does it run in vacuum or atmosphere?
The chamber is specified for vacuum / atmosphere operation with precision gas control. Pump and gas-line details for your process are confirmed at quotation.
Does the housing need cooling water?
Yes — the aluminum housing is water-cooled to keep the exterior and temperature field stable at 21 kW lamp power. Water-supply details are confirmed at quotation.
What’s included?
The OEM materials list no fixed standard configuration for this model; the supplied configuration and options are confirmed at quotation.
How do I order?
The ARTP600 is supplied by quotation: request via this page, and our engineers confirm the configuration for your process and reply with pricing and lead time.
Related
- Wafer Heating Module — custom 2–12 inch wafer heating to 600 °C with ±0.1 °C stability.
- Muffle Furnace AMFH1200 — electric muffle furnace to 1200 °C for sintering and annealing.
- High-Low Temperature Test Chamber ABCH180 — −120 to 180 °C chamber for variable-temperature testing.
Disclaimer: ACS Material, LLC believes the information on this page is accurate and represents the best and most current information available to us. Specifications reflect the manufacturer's current datasheet; idealized values are benchmarks and final configurations are confirmed at quotation — always refer to the model datasheet for guaranteed ratings. ACS Material makes no representations or warranties, express or implied, regarding suitability for any purpose, and will not be responsible for damages resulting from use of or reliance upon this information.