CAS No.: 7782-42-5
ACS Graphene on Ultra-Flat SiO2 Substrate is made by Trivial Transfer Graphene.
1. Four thicknesses of CVD graphene:
Available in either 1, 2, 3-5 or 6-8 layers
The Ultra-flat Thermal SiO2 Substrate consists of a 200nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
3. Graphene coverage of the ultra-flat silicon is > 75%
|Type||Thickness of the Graphene||Transparency||Support Film|
|1 Layer||~0.35nm||~96.4%||Ultra-flat Silicon|
|2 Layers||~0.7nm||~92.7%||Ultra-flat Silicon|
|3-5 Layers||1.0-1.7nm||~85.8-90.4%||Ultra-flat Silicon|
|6-8 Layers||2.1-2.8nm||~78.5-83.2%||Ultra-flat Silicon|
Left: SAED Right: FFT of HR-TEM Image
1. Can the Graphene Oxide on Ultra-flat Thermal SiO2 Substrate used for AFM studies?
Yes, our Ultra-flat Graphene and Graphene Oxide products were designed for AFM studies and we have many customers using them for such applications.