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Mechanically Exfoliated Single Crystal Graphene on SiO2/Si (SiO2: 300nm thick)

Mechanically Exfoliated Single Crystal Graphene on SiO2/Si (SiO2: 300nm thick)

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Single Crystal Graphene by Mechanical Exfoliation Method on SiO2/Si

Product Detail

CAS # 7782-42-5

1. Preparation Method

Mechanical Exfoliation method

 

2. Characterizations

Graphene Layer:

Monolayer, Single Crystal

Bilayer, Single Crystal

Substrate:

SiO/ Si

SiO/ Si

Substrate size:

1 cm x 1 cm

1.5cm x 1.5cm

2cm x 2cm

1 cm x 1 cm

1.5cm x 1.5cm

2cm x 2cm

Thickness of SiO2:

300 nm

 300 nm

Thickness of Si:

500µm

 500µm

Graphene Area:

>5000 µm2

 >5000 µm2

 

ME Single Crystal 1-layer graphene on SiO2/Si 

Typical Image of ACS Material Mechanically Exfoliated Single Crystal Monolayer Graphene on 300nm SiO2

ME Single Crystal 2-layer graphene on 300nm SiO2/Si

 Typical Image of ACS Material Mechanically Exfoliated Single Crytal Monolayer Graphene on 300nm SiO2

 

 3. Application Fields

Gas-sensitive materials, electronic displays, composite materials and more.