Mechanically Exfoliated Single Crystal Graphene on SiO2/Si (SiO2: 300nm thick)
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Single Crystal Graphene by Mechanical Exfoliation Method on SiO2/Si
Product Detail
CAS # 7782-42-5
1. Preparation Method
Mechanical Exfoliation method
2. Characterizations
|
Graphene Layer: |
Monolayer, Single Crystal |
Bilayer, Single Crystal |
|
Substrate: |
SiO2 / Si |
SiO2 / Si |
|
Substrate size: |
1 cm x 1 cm 1.5cm x 1.5cm 2cm x 2cm |
1 cm x 1 cm 1.5cm x 1.5cm 2cm x 2cm |
|
Thickness of SiO2: |
300 nm |
300 nm |
|
Thickness of Si: |
500µm |
500µm |
|
Graphene Area: |
＞5000 µm2 |
＞5000 µm2 |
Typical Image of ACS Material Mechanically Exfoliated Single Crystal Monolayer Graphene on 300nm SiO2
Typical Image of ACS Material Mechanically Exfoliated Single Crytal Monolayer Graphene on 300nm SiO2
3. Application Fields
Gas-sensitive materials, electronic displays, composite materials and more.